Low temperature pulsed plasma deposition: III. A method for the deposition of aluminium and tin at room temperature

A method is described for the room temperature deposition of tin and aluminium films using the recently published pulsed plasma deposition technique. It is shown that high-powered pulsed discharges of organometallics generally produce metal carbides but, by using pulsed discharges of hydrogen betwee...

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Bibliographic Details
Published in:Thin solid films 1990-10, Vol.191 (1), p.135-145
Main Authors: Llewellyn, I.P., Rimmer, N., Scarsbrook, G.A., Heinecke, R.A.
Format: Article
Language:English
Subjects:
Applied sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:A method is described for the room temperature deposition of tin and aluminium films using the recently published pulsed plasma deposition technique. It is shown that high-powered pulsed discharges of organometallics generally produce metal carbides but, by using pulsed discharges of hydrogen between the deposition pulses, virtually all the carbon in the film can be removed without requiring substrate heating. The technique is found to be capable of producing metal films at moderate deposition rates and of quality close to that of sputtered and evaporated films, but at temperatures close to room temperature. Results are presented on the conductivity of the films and practical applications for this technique are discussed.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(90)90279-M