Modification of the dielectric properties of parylene films by ion implantation

Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also incr...

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Bibliographic Details
Published in:Surface & coatings technology 1990, Vol.41 (2), p.205-209
Main Authors: Binder, Michael, Mammone, Robert J.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals, semimetals and alloys
Metals. Metallurgy
Nonmetallic coatings
Physics
Production techniques
Specific materials
Surface treatment
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Summary:Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also increased with ion irradiation.
ISSN:0257-8972
1879-3347
DOI:10.1016/0257-8972(90)90168-C