Analytical modeling and design criteria for traveling-wave FET amplifiers

The theoretical modeling and design of a traveling-wave FET are described. The device shows the capability of wide-bandwidth performance and high gain and could be useful in power applications. The proposed analytical model considers the full mode effects of the three-coupled transmission lines and...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1992-02, Vol.40 (2), p.202-208
Main Authors: D'Agostino, S., D'Inzeo, G., Tudini, L.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Broadband amplifiers
Distributed parameter circuits
Doping
Electrodes
Electronics
Exact sciences and technology
FETs
Performance gain
Power transmission lines
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Transistors
Transmission line theory
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The theoretical modeling and design of a traveling-wave FET are described. The device shows the capability of wide-bandwidth performance and high gain and could be useful in power applications. The proposed analytical model considers the full mode effects of the three-coupled transmission lines and an accurate analysis of the FET model in the traveling-wave amplifier. Starting from electrode dimensions and active zone doping, such a model allows one to calculate the scattering parameters. Thus, it is possible to analyze the device as a six port network in a circuit analysis program.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.120091