Enhancement of mobility in pseudomorphic FET's with up and down monolayers

We have used molecular beam epitaxy (MBE) to grow single molecular layers (monolayers) in quantum wells in order to improve electron transport. The quantum well energy levels, wave functions, and the carrier concentrations are obtained by self-consistently solving the Schrödinger and Poisson equatio...

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Bibliographic Details
Published in:JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE 1992, Vol.31 (7), p.2071-2074
Main Authors: GORONKIN, H, JUN SHEN, TEHRANI, S, RAVINDRANATH DROOPAD, MARACAS, G. N, LEGGE, R. N, ZHU, X. T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:We have used molecular beam epitaxy (MBE) to grow single molecular layers (monolayers) in quantum wells in order to improve electron transport. The quantum well energy levels, wave functions, and the carrier concentrations are obtained by self-consistently solving the Schrödinger and Poisson equations. Photoluminescence (PL) and Hall measurements confirmed the energy level shifts and the mobility enhancement due to the monolayer insertions.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.31.2071