Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 1990-08, Vol.2 (8), p.531-533
Main Authors: Waters, R.G., Bour, D.P., Yellen, S.L., Ruggieri, N.F.
Format: Article
Language:English
Subjects:
426002 - Engineering- Lasers & Masers- (1990-)
657002 - Theoretical & Mathematical Physics- Classical & Quantum Mechanics
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Degradation
Diodes
EFFICIENCY
EMISSION
ENERGY-LEVEL TRANSITIONS
ENGINEERING
Epitaxial growth
Gallium arsenide
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
Indium gallium arsenide
LASER MATERIALS
LASERS
MATERIALS
Optical materials
Optical propagation
PNICTIDES
QUANTUM EFFICIENCY
Quantum well lasers
Radiative recombination
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
STRAINS
Temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along
ISSN:1041-1135
1941-0174
DOI:10.1109/68.58039