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Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers
Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along
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Published in: | IEEE photonics technology letters 1990-08, Vol.2 (8), p.531-533 |
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container_title | IEEE photonics technology letters |
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creator | Waters, R.G. Bour, D.P. Yellen, S.L. Ruggieri, N.F. |
description | Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along |
doi_str_mv | 10.1109/68.58039 |
format | article |
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source | IEEE Electronic Library (IEL) Journals |
subjects | 426002 - Engineering- Lasers & Masers- (1990-) 657002 - Theoretical & Mathematical Physics- Classical & Quantum Mechanics ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Degradation Diodes EFFICIENCY EMISSION ENERGY-LEVEL TRANSITIONS ENGINEERING Epitaxial growth Gallium arsenide GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS Indium gallium arsenide LASER MATERIALS LASERS MATERIALS Optical materials Optical propagation PNICTIDES QUANTUM EFFICIENCY Quantum well lasers Radiative recombination SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SOLID STATE LASERS STIMULATED EMISSION STRAINS Temperature |
title | Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers |
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