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Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along

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Published in:IEEE photonics technology letters 1990-08, Vol.2 (8), p.531-533
Main Authors: Waters, R.G., Bour, D.P., Yellen, S.L., Ruggieri, N.F.
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Language:English
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container_issue 8
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container_title IEEE photonics technology letters
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creator Waters, R.G.
Bour, D.P.
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description Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along
doi_str_mv 10.1109/68.58039
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identifier ISSN: 1041-1135
ispartof IEEE photonics technology letters, 1990-08, Vol.2 (8), p.531-533
issn 1041-1135
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source IEEE Electronic Library (IEL) Journals
subjects 426002 - Engineering- Lasers & Masers- (1990-)
657002 - Theoretical & Mathematical Physics- Classical & Quantum Mechanics
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Degradation
Diodes
EFFICIENCY
EMISSION
ENERGY-LEVEL TRANSITIONS
ENGINEERING
Epitaxial growth
Gallium arsenide
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
Indium gallium arsenide
LASER MATERIALS
LASERS
MATERIALS
Optical materials
Optical propagation
PNICTIDES
QUANTUM EFFICIENCY
Quantum well lasers
Radiative recombination
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
STRAINS
Temperature
title Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers
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