On-wafer characterization, modelling, and optimization of InP-based HEMTs, PIN-photodiodes and monolithic receiver-OEICs for fiber-optic communication

The authors present results achieved with receiver OEICs (optoelectronic integrated circuits) consisting of InGaAs PIN-photodiodes and InAlAs/InGaAs HEMTs (high electron mobility transistors) grown by low-pressure MOVPE (metalorganic vapor phase epitaxy) on semi-insulating InP substrates. Both devic...

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Bibliographic Details
Main Authors: Kaiser, D., Grosskopf, H., Gyuro, I., Koerner, U., Kuebart, W., Reemtsma, J.-H., Eisele, H.
Format: Conference Proceeding
Language:English
Subjects:
Epitaxial growth
Epitaxial layers
HEMTs
Indium compounds
Indium gallium arsenide
Indium phosphide
MODFETs
Semiconductor device modeling
Semiconductor process modeling
Substrates
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Summary:The authors present results achieved with receiver OEICs (optoelectronic integrated circuits) consisting of InGaAs PIN-photodiodes and InAlAs/InGaAs HEMTs (high electron mobility transistors) grown by low-pressure MOVPE (metalorganic vapor phase epitaxy) on semi-insulating InP substrates. Both devices were realized on the same wafer. A 3-dB bandwidth of 1.6 GHz and an open eye at 3.0 Gb/s NRZ modulation of the monolithically integrated photoreceiver were obtained by on-wafer characterization.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1992.188044