Near-infrared optical properties of CoSi2 thin films

Transmission and reflection measurements in the energy range 0.5–1 eV have been performed on thin CoSi2 films grown by molecular-beam epitaxy on Si(111). For film thicknesses above 200 Å, the transmission factor decreases exponentially with film thickness, with an optical attenuation length of 180 Å...

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Bibliographic Details
Published in:Journal of applied physics 1990-09, Vol.68 (5), p.2346-2350
Main Authors: DUBOZ, J. Y, BADOZ, P. A, HENZ, J, VON KAÊNEL, H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:Transmission and reflection measurements in the energy range 0.5–1 eV have been performed on thin CoSi2 films grown by molecular-beam epitaxy on Si(111). For film thicknesses above 200 Å, the transmission factor decreases exponentially with film thickness, with an optical attenuation length of 180 Å nearly independent of photon energy. Deviations from this law for film thicknesses below 200 Å are explained by reflection effects. These data, supplemented by reflection measurements, can be fitted by theoretical calculations of the transmission and reflection factors, thus leading to the determination of the CoSi2 optical indexes. The energy dependence of the real and imaginary indexes is found to be consistent with the Drude model. Some interesting aspects of this intraband absorption either in ultrathin films or at low temperature are presented.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.346542