Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3‑Based Heterojunction

• Published in: ACS nano 2021-10, Vol.15 (10), p.16654-16663
• Main Authors: Wang, Yuehui, Li, Haoran, Cao, Jia, Shen, Jiaying, Zhang, Qingyi, Yang, Yongtao, Dong, Zhengang, Zhou, Tianhong, Zhang, Yang, Tang, Weihua, Wu, Zhenping
• Format: Article
• Language: English
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.1c06567

Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is attracting much attention due to their potential civilian and military applications. The avalanche photodetectors (APDs) formed based on wide-bandgap semiconductor Ga2O3 are expected to meet emerging technological demands. These devices, however, suffer from limitations associated with the quality of as-grown Ga2O3 or the difficulty in alleviating the defects and dislocations. Herein, high-performance APDs incorporating amorphous Ga2O3 (a-Ga2O3)/ITO heterojunction as the central element have been reliably fabricated at room temperature. The a-Ga2O3-based APDs exhibits an ultrahigh responsivity of 5.9 × 104 A/W, specific detectivity of 1.8 × 1014 Jones, and an external quantum efficiency up to 2.9 × 107% under 254 nm light irradiation at 40 V reverse bias. Notably, the gain could reach 6.8 × 104, indicating the outstanding capability for ultraweak signals detection. The comprehensive superior capabilities of the a-Ga2O3-based APDs can be ascribed to the intrinsic carrier transport manners in a-Ga2O3 as well as the modified band alignment at the heterojunctions. The trade-off between low processing temperature and superior characteristics of a-Ga2O3 promises greater design freedom for realization of wide applications of emerging semiconductor Ga2O3 with even better performance since relieving the burden on the integration progress.