Polycrystalline silicon thin-film resistors with irreversible resistance transition

An irreversible resistance transition has been investigated in a LPCVD polycrystalline silicon thin-film resistor. Under large voltage bias, the resistor can be switched to a ‘short’ state having resistance reduction by a factor of 100. On the basis of experimental results it is shown that maximum p...

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Bibliographic Details
Published in:Microelectronics 1992-03, Vol.23 (1), p.51-58
Main Authors: Petkovic, D M, Stojadinovic, N D
Format: Article
Language:English
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Summary:An irreversible resistance transition has been investigated in a LPCVD polycrystalline silicon thin-film resistor. Under large voltage bias, the resistor can be switched to a ‘short’ state having resistance reduction by a factor of 100. On the basis of experimental results it is shown that maximum power, at the point of irreversible change, has a major influence on the resistance after the change. It is also shown that the ratio of resistance before and after transition increases as doping concentration and film thickness decrease. Experimental results are reported, which show the doping concentration and film thickness influence on the transition voltage and current.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/0026-2692(92)90096-J