Physical DMOST modeling for high-voltage IC CAD

A physical, seminumerical charge-based model for vertical DMOSTs is developed and implemented in SPICE. The model is derived from regional quasi-static analyses of carrier transport which implicitly characterize the device currents and charges and which require numerical solution. Newton-Raphson ite...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1990-03, Vol.37 (3), p.797-803
Main Authors: Kim, Y.-S., Fossum, J.G.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit analysis
Circuit simulation
Computational modeling
Design automation
Electronics
Exact sciences and technology
Integrated circuit measurements
Integrated circuit modeling
Nonlinear equations
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
SPICE
Transistors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A physical, seminumerical charge-based model for vertical DMOSTs is developed and implemented in SPICE. The model is derived from regional quasi-static analyses of carrier transport which implicitly characterize the device currents and charges and which require numerical solution. Newton-Raphson iterative device solutions are derived within the circuit nodal analysis framework of SPICE. PISCES simulations and measurements of test devices support the model, which is demonstrated in DC and transient SPICE simulations of VDMOSTs and high-voltage integrated circuits (HVICs).< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.47788