Epitaxial growth of Be on α-Al2O3

We report the growth of epitaxial single-crystal (0001) hcp-Be on (0001) α-Al2O3 substrates using molecular beam epitaxy. Thin films were characterized in situ with reflection high energy electron diffraction, and ex situ with ion beam analysis, electron microscopy, atomic force microscopy, and a va...

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Bibliographic Details
Published in:Applied physics letters 1992-06, Vol.60 (24), p.2995-2997
Main Authors: RUFFNER, J. A, SLAUGHTER, J. M, FALCO, C. M
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Metals. Metallurgy
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We report the growth of epitaxial single-crystal (0001) hcp-Be on (0001) α-Al2O3 substrates using molecular beam epitaxy. Thin films were characterized in situ with reflection high energy electron diffraction, and ex situ with ion beam analysis, electron microscopy, atomic force microscopy, and a variety of x-ray diffraction techniques. The in-plane orientation of films grown at substrate temperatures T in the range 10 °C
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106787