Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications

Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al,Ga,In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al,Ga,...

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Bibliographic Details
Published in:IEEE photonics technology letters 1992-06, Vol.4 (6), p.627-630
Main Authors: Mondry, M.J., Babic, D.I., Bowers, J.E., Coldren, L.A.
Format: Article
Language:English
Subjects:
Diffraction
Indium phosphide
Lattices
Molecular beam epitaxial growth
Optical reflection
Optical waveguides
Photoluminescence
Refractive index
Spectroscopy
Superlattices
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Summary:Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al,Ga,In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al,Ga,In)As films as a function of wavelength. The measured data were fitted to a single-oscillator dispersion model, and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.141990