Priming of silicon substrates with trimethylsilyl containing compounds

Time of flight secondary ion mass spectroscopy (TOF SIMS) has been used to determine the surface coverage of trimethylsilyl groups after priming with HMDS (hexamethyldisilazane) and TMSDEA (trimethylsilyldiethylamine). A relation was found between the surface coverage of trimethylsilyl groups as mea...

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Bibliographic Details
Published in:Microelectronic engineering 1990, Vol.11 (1), p.475-480
Main Authors: Michielsen, M.C.B.A., Marriott, V.B., Ponjée, J.J., van der Wel, H., Touwslager, F.J., Moonen, J.A.H.M.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Time of flight secondary ion mass spectroscopy (TOF SIMS) has been used to determine the surface coverage of trimethylsilyl groups after priming with HMDS (hexamethyldisilazane) and TMSDEA (trimethylsilyldiethylamine). A relation was found between the surface coverage of trimethylsilyl groups as measured by TOF SIMS and the contact angle of a drop of water measured on a silicon oxide substrate after priming. This work that the trimethylsilyl groups at the resist substrate interface function as a barrier to undercutting during wet processes such as developing and wet etch. This work explains the effects of overpriming, such as dewetting and popping.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(90)90154-L