Room-temperature, electric field-induced creation of stable devices in CuInSe2 crystals

Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor [CuInSe.sub.2]. After removal of the electric field, the structures were examined with...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 1992-10, Vol.258 (5080), p.271-274
Main Authors: CAHEN, D, GILET, J.-M, SCHMITZ, C, CHERNYAK, L, GARTSMAN, K, JAKUBOWICZ, A
Format: Article
Language:English
Subjects:
Bipolar transistors
Chalcopyrite
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Junctions
Physics
Semiconductors
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Summary:Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor [CuInSe.sub.2]. After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their current voltage characteristics were measured. Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures. The devices are stable under normal (low-voltage) operating conditions. Possible causes for this effect, including electromigration and electric field-assisted defect reactions, are suggested.
ISSN:0036-8075
1095-9203