Optical transitions in quantum wires with strain-induced lateral confinement

Modulation of the in-plane lattice constant of a GaAs/GaAlAs quantum well, grown over an InGaAs/GaAs strained-layer superlattice, laterally confines the carriers to one dimension. Large energy shifts and polarization anisotropy occur.

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Bibliographic Details
Published in:Physical review letters 1990-09, Vol.65 (13), p.1631-1634
Main Authors: Gershoni, D, Weiner, JS, Chu, SN, Baraff, GA, Vandenberg, JM, Pfeiffer, LN, West, K, Logan, RA, Tanbun-Ek, T
Format: Article
Language:English
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Summary:Modulation of the in-plane lattice constant of a GaAs/GaAlAs quantum well, grown over an InGaAs/GaAs strained-layer superlattice, laterally confines the carriers to one dimension. Large energy shifts and polarization anisotropy occur.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.65.1631