Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser deposition

Epitaxial yttria-stabilized zirconia films were grown on Si (100) and Si (111) by pulsed laser deposition. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield of 5.3%. A necessary predeposition process is removal of native silicon...

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Bibliographic Details
Published in:Applied physics letters 1990-09, Vol.57 (11), p.1137-1139
Main Authors: Fork, D. K., Fenner, D. B., Connell, G. A. N., Phillips, Julia M., Geballe, T. H.
Format: Article
Language:English
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Summary:Epitaxial yttria-stabilized zirconia films were grown on Si (100) and Si (111) by pulsed laser deposition. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield of 5.3%. A necessary predeposition process is removal of native silicon oxide from the Si prior to film growth. This is done outside the deposition chamber at 23 °C using a wet-chemical hydrogen-termination procedure. Epitaxial YBa2Cu3O7−δ films have been grown on these films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104220