A Si bipolar 28-GHz dynamic frequency divider

A dynamic frequency divider applying the regenerative frequency division principle has been developed. A spiral inductor on the silicon substrate used as a load is characterized, and an improved one-port model with the substrate resistance is discussed. A 1/16 frequency divider was implemented with...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1992-12, Vol.27 (12), p.1799-1804
Main Authors: Kurisu, M., Uemura, G., Ohuchi, M., Ogawa, C., Takemura, H., Morikawa, T., Tashiro, T.
Format: Article
Language:English
Subjects:
Circuits
Cutoff frequency
Frequency conversion
Inductors
Microwave frequencies
Microwave technology
Millimeter wave technology
MMICs
Silicon
Spirals
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Summary:A dynamic frequency divider applying the regenerative frequency division principle has been developed. A spiral inductor on the silicon substrate used as a load is characterized, and an improved one-port model with the substrate resistance is discussed. A 1/16 frequency divider was implemented with a silicon bipolar technology with a cutoff frequency of 40 GHz. The operation frequency range was 11.8-28.1 GHz, covering the Ka band (18-26.5 GHz). The inductive load has improved the maximum operation frequency by 7%, compared with a conventional circuit. Complemented with a 21-GHz static frequency divider previously reported by the authors, the whole microwave frequency range up to 26.5 GHz has been completely covered with the silicon bipolar technology. The maximum operation frequency of a silicon MMIC has been extended to the millimeter-wave frequency region for the first time.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.173108