Structure of TiN films deposited on heated and negatively biased silicon substrates

The structure of TiN films has been studied by X-ray diffraction. The silicon substrates were heated and negatively biased during deposition, the bias voltage was varied between 0 and −200 V and the temperature between 150 and 900°C. The variations in the lattice parameter are correlated with oxygen...

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Published in:Thin solid films 1992-07, Vol.215 (1), p.8-13
Main Authors: Mahéo, D., Poitevin, J.M.
Format: Article
Language:English
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Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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cited_by cdi_FETCH-LOGICAL-c430t-88fb2dc2bcec4b931ad4e04c3f6978f412c1409e8f347bb7bcd63019fc063e573
cites cdi_FETCH-LOGICAL-c430t-88fb2dc2bcec4b931ad4e04c3f6978f412c1409e8f347bb7bcd63019fc063e573
container_end_page 13
container_issue 1
container_start_page 8
container_title Thin solid films
container_volume 215
creator Mahéo, D.
Poitevin, J.M.
description The structure of TiN films has been studied by X-ray diffraction. The silicon substrates were heated and negatively biased during deposition, the bias voltage was varied between 0 and −200 V and the temperature between 150 and 900°C. The variations in the lattice parameter are correlated with oxygen-to-titanium and argon-to-titanium ratios. Oxygen and argon impurities seem to be the main reasons for the stress and the lattice distortion, a low value of the impurity content being correlated with a low value of the lattice distortion. However, our results show that other reasons may be involved, such as structural damage or mismatches between the film and the substrate.
doi_str_mv 10.1016/0040-6090(92)90693-6
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25882413</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>0040609092906936</els_id><sourcerecordid>25882413</sourcerecordid><originalsourceid>FETCH-LOGICAL-c430t-88fb2dc2bcec4b931ad4e04c3f6978f412c1409e8f347bb7bcd63019fc063e573</originalsourceid><addsrcrecordid>eNp9kE1LxEAMhgdRcP34Bx56ENFDNfOxbeciiPgFogf1PEzTjI5023XSCv57u6549JQQnjchjxAHEk4lyOIMwEBegIVjq04sFFbnxYaYyaq0uSq13BSzP2Rb7DC_A4BUSs_E09OQRhzGRFkfsuf4kIXYLjhraNlzHKjJ-i57I7_qfNdkHb36IX5S-5XV0fM05dhGnCAeax7SBPKe2Aq-Zdr_rbvi5frq-fI2v3-8ubu8uM_RaBjyqgq1alDVSGhqq6VvDIFBHQpbVsFIhdKApSpoU9Z1WWNTaJA2IBSa5qXeFUfrvcvUf4zEg1tERmpb31E_slPzqlJG6gk0axBTz5wouGWKC5--nAS3MuhWetxKj7PK_Rh0xRQ7_N3vGX0bku8w8l92rksAbSfsfI3R9OtnpOQYI3VITUyEg2v6-P-db4z4hQw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25882413</pqid></control><display><type>article</type><title>Structure of TiN films deposited on heated and negatively biased silicon substrates</title><source>Backfile Package - Materials Science [YMS]</source><source>Backfile Package - Physics General (Legacy) [YPA]</source><creator>Mahéo, D. ; Poitevin, J.M.</creator><creatorcontrib>Mahéo, D. ; Poitevin, J.M.</creatorcontrib><description>The structure of TiN films has been studied by X-ray diffraction. The silicon substrates were heated and negatively biased during deposition, the bias voltage was varied between 0 and −200 V and the temperature between 150 and 900°C. The variations in the lattice parameter are correlated with oxygen-to-titanium and argon-to-titanium ratios. Oxygen and argon impurities seem to be the main reasons for the stress and the lattice distortion, a low value of the impurity content being correlated with a low value of the lattice distortion. However, our results show that other reasons may be involved, such as structural damage or mismatches between the film and the substrate.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/0040-6090(92)90693-6</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Thin solid films, 1992-07, Vol.215 (1), p.8-13</ispartof><rights>1992</rights><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c430t-88fb2dc2bcec4b931ad4e04c3f6978f412c1409e8f347bb7bcd63019fc063e573</citedby><cites>FETCH-LOGICAL-c430t-88fb2dc2bcec4b931ad4e04c3f6978f412c1409e8f347bb7bcd63019fc063e573</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/0040609092906936$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3555,3632,27924,27925,46004,46012</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=5370039$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mahéo, D.</creatorcontrib><creatorcontrib>Poitevin, J.M.</creatorcontrib><title>Structure of TiN films deposited on heated and negatively biased silicon substrates</title><title>Thin solid films</title><description>The structure of TiN films has been studied by X-ray diffraction. The silicon substrates were heated and negatively biased during deposition, the bias voltage was varied between 0 and −200 V and the temperature between 150 and 900°C. The variations in the lattice parameter are correlated with oxygen-to-titanium and argon-to-titanium ratios. Oxygen and argon impurities seem to be the main reasons for the stress and the lattice distortion, a low value of the impurity content being correlated with a low value of the lattice distortion. However, our results show that other reasons may be involved, such as structural damage or mismatches between the film and the substrate.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxEAMhgdRcP34Bx56ENFDNfOxbeciiPgFogf1PEzTjI5023XSCv57u6549JQQnjchjxAHEk4lyOIMwEBegIVjq04sFFbnxYaYyaq0uSq13BSzP2Rb7DC_A4BUSs_E09OQRhzGRFkfsuf4kIXYLjhraNlzHKjJ-i57I7_qfNdkHb36IX5S-5XV0fM05dhGnCAeax7SBPKe2Aq-Zdr_rbvi5frq-fI2v3-8ubu8uM_RaBjyqgq1alDVSGhqq6VvDIFBHQpbVsFIhdKApSpoU9Z1WWNTaJA2IBSa5qXeFUfrvcvUf4zEg1tERmpb31E_slPzqlJG6gk0axBTz5wouGWKC5--nAS3MuhWetxKj7PK_Rh0xRQ7_N3vGX0bku8w8l92rksAbSfsfI3R9OtnpOQYI3VITUyEg2v6-P-db4z4hQw</recordid><startdate>19920730</startdate><enddate>19920730</enddate><creator>Mahéo, D.</creator><creator>Poitevin, J.M.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>19920730</creationdate><title>Structure of TiN films deposited on heated and negatively biased silicon substrates</title><author>Mahéo, D. ; Poitevin, J.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c430t-88fb2dc2bcec4b931ad4e04c3f6978f412c1409e8f347bb7bcd63019fc063e573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mahéo, D.</creatorcontrib><creatorcontrib>Poitevin, J.M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mahéo, D.</au><au>Poitevin, J.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structure of TiN films deposited on heated and negatively biased silicon substrates</atitle><jtitle>Thin solid films</jtitle><date>1992-07-30</date><risdate>1992</risdate><volume>215</volume><issue>1</issue><spage>8</spage><epage>13</epage><pages>8-13</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The structure of TiN films has been studied by X-ray diffraction. The silicon substrates were heated and negatively biased during deposition, the bias voltage was varied between 0 and −200 V and the temperature between 150 and 900°C. The variations in the lattice parameter are correlated with oxygen-to-titanium and argon-to-titanium ratios. Oxygen and argon impurities seem to be the main reasons for the stress and the lattice distortion, a low value of the impurity content being correlated with a low value of the lattice distortion. However, our results show that other reasons may be involved, such as structural damage or mismatches between the film and the substrate.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/0040-6090(92)90693-6</doi><tpages>6</tpages></addata></record>
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1879-2731
language eng
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subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Structure of TiN films deposited on heated and negatively biased silicon substrates
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T17%3A02%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structure%20of%20TiN%20films%20deposited%20on%20heated%20and%20negatively%20biased%20silicon%20substrates&rft.jtitle=Thin%20solid%20films&rft.au=Mah%C3%A9o,%20D.&rft.date=1992-07-30&rft.volume=215&rft.issue=1&rft.spage=8&rft.epage=13&rft.pages=8-13&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/0040-6090(92)90693-6&rft_dat=%3Cproquest_cross%3E25882413%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c430t-88fb2dc2bcec4b931ad4e04c3f6978f412c1409e8f347bb7bcd63019fc063e573%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=25882413&rft_id=info:pmid/&rfr_iscdi=true