Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates

Heteroepitaxial layers of InP with thickness D ranging from 0.1 to 6.0 μm were grown by low-pressure metalorganic chemical vapor deposition on (001) surfaces of GaAs substrates. Their dislocation structure, induced strains, and nature of the radiative recombinations were investigated as a function o...

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Bibliographic Details
Published in:Journal of applied physics 1992-05, Vol.71 (9), p.4492-4501
Main Authors: OLEGO, D. J, OKUNO, Y, KAWANO, T, TAMURA, M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:Heteroepitaxial layers of InP with thickness D ranging from 0.1 to 6.0 μm were grown by low-pressure metalorganic chemical vapor deposition on (001) surfaces of GaAs substrates. Their dislocation structure, induced strains, and nature of the radiative recombinations were investigated as a function of D with transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy. For D
ISSN:0021-8979
1089-7550
DOI:10.1063/1.350794