Thermodynamic Calculations on the Chemical Vapor Deposition of Silicon Nitride and Silicon from Silane and Chlorinated Silanes

After a discussion of the thermochemical values of the Si–H–Cl–N system which occur in the literature, CVD phase diagrams are presented which include contours of constant deposition efficiency. The temperature range considered is from 800 to 2600 K. A number of chlorinated silanes as well as silane...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1992-03, Vol.75 (3), p.619-628
Main Authors: Kruis, Frank Einar, Scarlett, Brian, Bauer, Robert A., Schoonman, Joop
Format: Article
Language:English
Subjects:
chemical vapor deposition
Chemistry
Exact sciences and technology
General and physical chemistry
Others (including liquid-liquid-vapor equilibria)
phase diagrams
Phase equilibria
silanes
silicon nitride
thermodynamics
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Summary:After a discussion of the thermochemical values of the Si–H–Cl–N system which occur in the literature, CVD phase diagrams are presented which include contours of constant deposition efficiency. The temperature range considered is from 800 to 2600 K. A number of chlorinated silanes as well as silane can be used as a silicon source, while ammonia is used as the nitrogen source. The effects of pressure variation and dilution by nitrogen and hydrogen are also included. Some initial calculations concerning silicon diimide are made. The CVD phase diagrams are used to describe several mechanisms occurring during the formation of silicon nitride from the gas phase.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1992.tb07851.x