Porous SiO sub 2 films analyzed by transmission electron microscopy

Porous SiO sub 2 films derived from a novel organic-inorganic composite sol-gel process were studied for possible applications in the microelectronics industry. The films were capped with plasma-enhanced chemical-vapor-deposited silicon nitride and characterized using ellipsometry, IR spectroscopy a...

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Bibliographic Details
Published in:Thin solid films 1995-06, Vol.261 (1-2), p.59-63
Main Authors: Gignac, L M, Parrill, T M, Chandrashekhar, G V
Format: Article
Language:English
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Summary:Porous SiO sub 2 films derived from a novel organic-inorganic composite sol-gel process were studied for possible applications in the microelectronics industry. The films were capped with plasma-enhanced chemical-vapor-deposited silicon nitride and characterized using ellipsometry, IR spectroscopy and cross-sectional transmission electron microscopy (TEM). TEM cross-sections were prepared using a focused ion beam (FIB) system, because traditional TEM preparation by polishing was too harsh for the fragile samples. The TEM analysis determined the film thickness to be 155 nm for SiO sub 2 and 83 nm for Si sub 3 N sub 4 , and showed high porosity in the SiO sub 2 film and vertical pores in the Si sub 3 N sub 4 film.
ISSN:0040-6090