Preparation of bismuth titanate thin films by laser ablation

Ferroelectric bismuth titanate thin films have been prepared on Si substrates at low temperature by the laser ablation method using an ArF laser. Dependences of crystallographic property of the film on substrate temperature, O 2 gas pressure, laser repetition frequency and annealing temperature are...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995, Vol.34 (9B), p.5141-5145
Main Authors: WENBIAO WU, FUMOTO, K, OISHI, Y, OKUYAMA, M, HAMAKAWA, Y
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Dielectric, piezoelectric, ferroelectric and antiferroelectric materials
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Laser deposition
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Niobates, titanates, tantalates, pzt ceramics, etc
Physics
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Summary:Ferroelectric bismuth titanate thin films have been prepared on Si substrates at low temperature by the laser ablation method using an ArF laser. Dependences of crystallographic property of the film on substrate temperature, O 2 gas pressure, laser repetition frequency and annealing temperature are presented. The preferentially c -axis-oriented films have been obtained on Si substrates at a substrate temperature of 400° C with annealing at 700° C, and on Pt substrates at a low substrate temperature of 450° C.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.5141