1.3 micron electroabsorption reflection modulators on GaAs

We demonstrate a reflection electroabsorption modulator grown on a GaAs substrate operating near 1.3 micron, the dispersion minimum for silica fibers. The device was grown by MBE and uses a novel technique of integrating the bottom quarter-wave mirror into a buffer with linearly graded In compositio...

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Bibliographic Details
Published in:Applied physics letters 1993-08, Vol.63 (6), p.806-808
Main Authors: Lord, S M, Trezza, J A, Larson, M C, Pezeshki, B, HARRIS, J S, J R
Format: Article
Language:English
Online Access:Get full text
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Summary:We demonstrate a reflection electroabsorption modulator grown on a GaAs substrate operating near 1.3 micron, the dispersion minimum for silica fibers. The device was grown by MBE and uses a novel technique of integrating the bottom quarter-wave mirror into a buffer with linearly graded In composition. The active area consisted of 30 InGaAs quantum wells with GaAs barriers. The mirror was formed by layers of InGaAs and InAlAs where the In concentration was graded from 0 percent to 35 percent. A maximum relative change in reflectivity of 73 percent at 1.33 micron was achieved. Experimental results agree with simulations performed using the transfer matrix technique. (Author (revised))
ISSN:0003-6951