Chemical vapor deposition of ruthenium and osmium thin films using (hexafluoro-2-butyne)tetracarbonylruthenium and -osmium

• Published in: Chemistry of materials 1993-12, Vol.5 (12), p.1715-1721
• Main Authors: Senzaki, Yoshihide, Gladfelter, Wayne L, McCormick, Fred B
• Format: Article
• Language: English
• Subjects: Chemistry; Exact sciences and technology; General and physical chemistry; Solid-gas interface; Surface physical chemistry
• ISSN: 0897-4756; 1520-5002
• DOI: 10.1021/cm00036a008

The known mononuclear ruthenium complex Ru(hfb)(CO) sub 4 , where hfb stands for hexafluoro-2-butyne, has a vapor pressure of 1.5 torr at 25 deg C and forms reflective Ru thin films by chemical vapor deposition (CVD) using H sub 2 carrier gas with a growth rate of 21 nm/min at 500 deg C. The resistivity of a Ru film having a grain size of 60 nm was 22 mu Omega cm. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD) analyses indicated that the films were pure, polycrystalline Ru ( < 1% carbon, oxygen, or fluorine). Scanning electron microscopy and XRD analyses revealed that the deposition temperature and the presence of H sub 2 gas affect the microstructure and the resistivity of the films. Os(hfb)(CO) sub 4 afforded polycrystalline osmium thin films using H sub 2 as a carrier gas. A growth rate of 14 nm/min, a resistivity of 81 mu Omega cm, and a grain size of 20 nm were found for depositions conducted at 600 deg C. XPS analysis indicated that the film consists of 84% Os, 7% O, and 9% C. The new dinuclear metal complexes M sub 2 \ mu - eta exp 1 : eta exp 1 : eta exp 4 -C sub 4 (CF sub 3 ) sub 4 \(CO) sub 6 (M = Ru,Os) were formed from M(hfb)(CO) sub 4 during the CVD processes conducted in the absence of H sub 2 gas at the temperature range 150-300 deg C.