Characterization of germanium implanted Si sub(1-X)Ge sub(X) layer

Characterization of a Si sub(1-X)Ge sub(X) layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the si...

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Bibliographic Details
Published in:Journal of electronic materials 1993-01, Vol.22 (1), p.125-128
Main Authors: Gupta, Ashawant, Cook, Carmen, Toyoshiba, Len, Qiao, Jianmin, Yang, Cary Y, Shoji, Ken-Ichi, Fukami, Akira, Nagano, Takahiro, Tokuyama, Takashi
Format: Article
Language:English
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Summary:Characterization of a Si sub(1-X)Ge sub(X) layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise to larger resistance. Optimization of the device structure and fabrication process is discussed.
ISSN:0361-5235