Room-temperature photoluminescence of erbium-doped hydrogenated amorphous silicon

A comparison of the photoluminescence of Er-doped hydrogenated amorphous silicon and crystalline silicon a-Si:H(Er) and c-Si(Er), is presented. It is shown that a-Si:H(Er) exhibits efficient room-temperature photoluminescence at 1.537 μm which is as strong as the emission from optimized c-Si(Er) at...

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Bibliographic Details
Published in:Applied physics letters 1995-12, Vol.67 (24), p.3599-3601
Main Authors: Bresler, M. S., Gusev, O. B., Kudoyarova, V. Kh, Kuznetsov, A. N., Pak, P. E., Terukov, E. I., Yassievich, I. N., Zakharchenya, B. P., Fuhs, W., Sturm, A.
Format: Article
Language:English
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Summary:A comparison of the photoluminescence of Er-doped hydrogenated amorphous silicon and crystalline silicon a-Si:H(Er) and c-Si(Er), is presented. It is shown that a-Si:H(Er) exhibits efficient room-temperature photoluminescence at 1.537 μm which is as strong as the emission from optimized c-Si(Er) at 2 K. Most remarkably, there is practically no temperature quenching of the emission intensity in the range 2–300 K. The experiments suggest that the lifetime connected with the Er-induced emission is considerably shorter in a-Si:H(Er) than in c-Si(Er) which may be responsible for the different dependences of the photoluminescence intensity on the temperature, chopping frequency, and excitation power.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115330