Characterization of GaAs and InGaAs double-quantum well heterostructure FETs

It is pointed out that among the large variety of heterostructure field effect transistors, multichannel devices present a particular originality: their transconductance profile is very flexible and depends on the structure parameters. They are therefore suited for high signal nonlinear applications...

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Bibliographic Details
Published in:I.E.E.E. transactions on electron devices 1993-11, Vol.40 (11), p.1935-1941
Main Authors: Theron, D., Bonte, B., Gaquiere, C., Playez, E., Crosnier, Y.
Format: Article
Language:English
Subjects:
Applied sciences
Current density
Cutoff frequency
Electronics
Exact sciences and technology
Gallium arsenide
HEMTs
Indium gallium arsenide
MODFETs
Quantum well devices
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Structural engineering
Transconductance
Transistors
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Summary:It is pointed out that among the large variety of heterostructure field effect transistors, multichannel devices present a particular originality: their transconductance profile is very flexible and depends on the structure parameters. They are therefore suited for high signal nonlinear applications. The specific case of double quantum-well structures is studied. Conventional and pseudomorphic devices are characterized under DC and RF conditions. Very high current densities (up to 1.2 A/mm) are demonstrated. The effect of different structural parameters on the transconductance and cutoff frequency is discussed. The results are analyzed in order to give a full understanding of these devices and to demonstrate their performances.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.239731