Second quantized state lasing and gain spectra measurements in n-type modulation doped GaAs-AlGaAs quantum-well lasers

The emission characteristics of n-type modulation doped GaAs-AlGaAs quantum-well lasers are studied for constant doping density and stepped doping density laser cores. Constant doping density cores are found to have a shift to shorter wavelength with increasing doping density but suffer from a corre...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1995-11, Vol.31 (11), p.1941-1946
Main Authors: Kohnke, G.E., Wicks, G.W.
Format: Article
Language:English
Subjects:
Bandwidth
Current measurement
Density measurement
Doping
Epitaxial layers
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gain measurement
Laser transitions
Lasers
Optics
Physics
Quantum well lasers
Semiconductor lasers
laser diodes
Threshold current
Wavelength measurement
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Summary:The emission characteristics of n-type modulation doped GaAs-AlGaAs quantum-well lasers are studied for constant doping density and stepped doping density laser cores. Constant doping density cores are found to have a shift to shorter wavelength with increasing doping density but suffer from a corresponding large increase in threshold current density. Stepped doping density cores exhibit clear wavelength shifting from the first to second quantized state transitions with increased doping near the quantum well while maintaining low threshold current densities. Threshold current densities of 440 A/cm/sup 2/ are measured for second quantized state lasing in stepped core lasers. Gain spectra are measured for the stepped doping density core devices and modulation doping is shown to improve the gain bandwidth by 50% over undoped devices.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.469274