Solid state intermetallic compound layer growth between copper and hot dipped indium coatings

Solid state growth of intermetallic compound layers that form between hot dipped indium coatings and copper was investigated in diffusion couples aged at temperatures of 70, 100 and 135 deg C and time periods of up to 300 days. At an annealing temperature of 70 deg C, the metastable composition, Cu...

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Bibliographic Details
Published in:Journal of materials science 1995-10, Vol.30 (19), p.4871-4878
Main Authors: VIANCO, P. T, KILGO, A. C, GRANT, R
Format: Article
Language:English
Subjects:
Applied sciences
Chemical interdiffusion
diffusion barriers
Condensed matter: structure, mechanical and thermal properties
Diffusion in solids
Exact sciences and technology
Metals. Metallurgy
Physics
Transport properties of condensed matter (nonelectronic)
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Summary:Solid state growth of intermetallic compound layers that form between hot dipped indium coatings and copper was investigated in diffusion couples aged at temperatures of 70, 100 and 135 deg C and time periods of up to 300 days. At an annealing temperature of 70 deg C, the metastable composition, Cu sub 36 In sub 64 , was observed at the interface. Ageing at 100 deg C caused a dual layer structure with the Cu sub 36 In sub 64 layer joined by a copper-rich intermetallic compound, Cu sub 11 In sub 9 , that is noted in the equilibrium phase diagram. An annealing temperature of 135 deg C caused the eventual development of a single copper-rich intermetallic layer, Cu sub 57 In sub 43 , at the interface. Total intermetallic layer thickness was documented as a function of ageing time and temperature, exhibiting a t exp 1/2 dependence with an apparent activation energy of 20 kJ mol exp -1 .
ISSN:0022-2461
1573-4803
DOI:10.1007/BF01154497