A simple parameter extraction method for ultra-thin oxide MOSFETs

A simple parameter extraction technique is presented for ultra-thin oxide MOSFETs. The technique is based on a suitable MOSFET mobility model and extracts threshold voltage ( V t), mobility ( μ 0), and two mobility degradation parameters θ 1 and θ 2. It has been found that the extracted parameters a...

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Bibliographic Details
Published in:Solid-state electronics 1995, Vol.38 (6), p.1175-1177
Main Authors: McLarty, P.K, Cristoloveanu, S, Faynot, O, Misra, V, Hauser, J.R, Wortman, J.J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A simple parameter extraction technique is presented for ultra-thin oxide MOSFETs. The technique is based on a suitable MOSFET mobility model and extracts threshold voltage ( V t), mobility ( μ 0), and two mobility degradation parameters θ 1 and θ 2. It has been found that the extracted parameters accurately describe the measured current voltage characteristics for strong inversion.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(94)00248-E