Direct observation of porous SiC formed by anodization in HF

A process for forming porous SiC from single-crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n-type 6H-SiC in HF under UV illumination. TEM reveals pores of sizes 10-30 nm with interpore spacings ranging from roughly 5 to 150 nm. This is the first reported direct...

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Bibliographic Details
Published in:Applied physics letters 1993-05, Vol.62 (22), p.2836-2838
Main Authors: Shor, Joseph S., Grimberg, Ilana, Weiss, Ben-Zion, Kurtz, Anthony D.
Format: Article
Language:English
Subjects:
Chemistry
Electrochemistry
Exact sciences and technology
General and physical chemistry
Photoelectrochemistry. Electrochemiluminescence
Solid-State Physics
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Summary:A process for forming porous SiC from single-crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n-type 6H-SiC in HF under UV illumination. TEM reveals pores of sizes 10-30 nm with interpore spacings ranging from roughly 5 to 150 nm. This is the first reported direct observation of porous SiC formation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109226