Si/SiGe MMIC's

Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper presents a survey on the state-of-the-art performance of this technology and on first applications, The ke...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1995-04, Vol.43 (4), p.705-714
Main Authors: Luy, J.-F., Strohm, K.M., Sasse, H.-E., Schuppen, A., Buechler, J., Wollitzer, M., Gruhle, A., Schaffler, F., Guettich, U., Klaassen, A.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Frequency
Germanium silicon alloys
Integrated circuit technology
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Millimeter wave integrated circuits
P-i-n diodes
Phase detection
Power generation
Schottky diodes
Silicon germanium
Switching circuits
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Summary:Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper presents a survey on the state-of-the-art performance of this technology and on first applications, The key devices are IMPATT diodes for MM-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits. The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with f/sub max/ values of more than 90 GHz is now used for low-noise oscillators at Ka-band frequencies. First system applications are discussed.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.375215