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Hexagonal boron nitride synthesis by nitrogen ion implantation of boron films
Boron was evaporated from an electron-gun-heated tantalum crucible and deposited as 1000 Å films onto KBr disks and polished Ti-6A1-4V cylindrical substrates. The films were then bombarded by 50 keV N 2 + ions for doses ranging from 0.5 × 10 17 to 3 × 10 17 N 2 + cm -2. The highest dose was retained...
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Published in: | Thin solid films 1993-09, Vol.232 (2), p.185-193 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Boron was evaporated from an electron-gun-heated tantalum crucible and deposited as 1000 Å films onto KBr disks and polished Ti-6A1-4V cylindrical substrates. The films were then bombarded by 50 keV N
2
+ ions for doses ranging from 0.5 × 10
17 to 3 × 10
17 N
2
+ cm
-2. The highest dose was retained for implantation at different substrate temperatures (
i.e. room temperature, 150°C, 300°C, 450°C and 600°C). The implanted films were characterized by X-ray photoelectron spectroscopy and IR and UV-visible spectroscopies. Hexagonal boron nitride formation as a function of dose and substrate temperature was studied. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(93)90007-C |