Filament formation in a tapered GaAlAs optical amplifier

Filament formation in a tapered GaAlAs amplifier with an output width of 320 μm is characterized by injecting an input beam with a superimposed sinusoidal intensity modulation (30 μm period, 30% peak-to-peak modulation). Strong seeded filamentation of the output near field, and large far field side...

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Bibliographic Details
Published in:Applied physics letters 1993-05, Vol.62 (19), p.2304-2306
Main Authors: GOLDBERG, L, SURETTE, M. R, MEHUYS, D
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical elements, devices, and systems
Optics
Physics
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Summary:Filament formation in a tapered GaAlAs amplifier with an output width of 320 μm is characterized by injecting an input beam with a superimposed sinusoidal intensity modulation (30 μm period, 30% peak-to-peak modulation). Strong seeded filamentation of the output near field, and large far field side lobes are observed for powers above approximately 1 W. Time dependent decay of the main far field lobe, characterized by a time constant of several microseconds, is used to separate the effects of localized carrier density variations from the thermal contribution to intensity and phase distortion of the output beam.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109399