Electrical and optical characterization of semi-insulating Ga sub(x)In sub(1-x)As sub(y)P sub(1-y)/InP grown by gas source molecular beam epitaxy

Iron-doped semi-insulating Ga sub(x)In sub(1-x)As sub(y)P sub(1-y)(0.4 less than or approximate to y less than or approximate to 1) alloys lattice-matched to InP grown by gas source molecular beam epitaxy are characterized by secondary ion mass spectrometry, current-voltage and optical loss measurem...

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Bibliographic Details
Published in:Journal of crystal growth 1993-01, Vol.127 (1-4), p.237-240
Main Authors: Pagnod-Rossiaux, Ph, Renaud, M, Gaborit, F, Martin, B
Format: Article
Language:English
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Summary:Iron-doped semi-insulating Ga sub(x)In sub(1-x)As sub(y)P sub(1-y)(0.4 less than or approximate to y less than or approximate to 1) alloys lattice-matched to InP grown by gas source molecular beam epitaxy are characterized by secondary ion mass spectrometry, current-voltage and optical loss measurements. Fe concentrations ranging from 1 x 10 super(15) to 1 x 10 super(17) cm super(-3) are investigated. Very high resistivities of 2 x 10 super(3) and 3.5 x 10 super(7) Omega are obtained for y = 1 and 0.4 with iron concentrations of 5 x 10 super(16) and 1 x 10 super(17) cm super(-3), respectively. For GaInAsP (y = 0.4), optical losses of about 1.8 dB/cm are measured for a maximum Fe concentration of 4 x 10 super(16) cm super(-3).
ISSN:0022-0248