Tunable Performance of Quantum Dot-MoS2 Hybrid Photodetectors via Interface Engineering

• Published in: ACS applied materials & interfaces 2021-12, Vol.13 (49), p.59411-59421
• Main Authors: Chang, Ruiheng, Wang, Kexin, Zhang, Youwei, Ma, Tianzi, Tang, Jianwei, Chen, Xue-Wen, Zhang, Butian, Wang, Shun
• Format: Article
• Language: English
• Subjects: Surfaces, Interfaces, and Applications
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.1c10888

Heterostructures of quantum dots (QDs) and two-dimensional (2D) materials show promising potential for photodetection applications owing to their combination of high optical absorption and good in-plane carrier mobility. In this work, the performance of QD-2D photodetectors is tuned by band engineering. Devices are fabricated by coating MoS2 nanosheets with InP QDs, type-I core–shell InP/ZnS QDs, and type-II core–shell InP/CdS QDs. Comparative spectroscopic and photoelectric studies of different hybrids show that the energy band alignment and shell thickness can influence the efficiency of charge transfer (CT), energy transfer (ET), and defect-related processes between QDs and MoS2. Benefiting from efficient CT between the QDs and MoS2, a significant enhancement of responsivity and detectivity is observed in thick-shell InP/CdS QD-MoS2 devices. Our results demonstrate the feasibility of using core–shell QDs for regulating the ET and CT efficiency in heterostructures and highlight the importance of interface band design in QD-2D and other low-dimensional photodetectors.