Ambipolar performances of novel amorphous silicon-germanium alloy thin-film transistors

The limitation of low hole mobility in hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) was overcome in this present work by utilizing hydrogenated amorphous silicon-germanium (a-Si 1- x Ge x :H) alloys as the active channel of TFTs. The performance of hydrogenated amorphous silico...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993-08, Vol.32 (8A), p.L1043-L1045
Main Authors: Hsieh, Shou Wei, Chang, Chun Yen, Lee, Yeong Shyang, Lin, Chiung Wei, Wu, Biing Sheng, Chen, Hsiung Kuang
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The limitation of low hole mobility in hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) was overcome in this present work by utilizing hydrogenated amorphous silicon-germanium (a-Si 1- x Ge x :H) alloys as the active channel of TFTs. The performance of hydrogenated amorphous silicon-germanium thin film transistors (a-SiGe:H TFTs) was optimized by switching the germane-to-silane flow ratio. The fabricated a-SiGe:H TFT with 12 at% germanium content was measured as possessing an electron mobility of 0.71 cm 2 /V·s and a hole mobility of 0.54 cm 2 /V·s. The on/off current ratio ranging over almost six orders of magnitude in both conduction modes was obtained. Thus a-SiGe:H TFT has offered the opportunity for upgrading of a-Si:H TFTs and would be feasible for application in [CMOS] circuits.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.l1043