High-power single-mode 2.0 mu m laser diodes

Data are presented on high-power single-mode index-guided laser diodes fabricated from a strained-layer InGaAs-InGaAsP double quantum well heterostructure epitaxial design. The total maximum power and external efficiency achieved are 50 mW and 43%, respectively. The far-field is measured to be 31 de...

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Bibliographic Details
Published in:IEEE photonics technology letters 1993-07, Vol.5 (7), p.733-734
Main Authors: Major, J.S., Nam, D.W., Osinski, J.S., Welch, D.F.
Format: Article
Language:English
Subjects:
Conducting materials
Diode lasers
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Indium gallium arsenide
Indium phosphide
Laser excitation
Lasers
Optical materials
Optics
Physics
Power generation
Semiconductor lasers
laser diodes
Solid lasers
Thermal conductivity
Waveguide lasers
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Summary:Data are presented on high-power single-mode index-guided laser diodes fabricated from a strained-layer InGaAs-InGaAsP double quantum well heterostructure epitaxial design. The total maximum power and external efficiency achieved are 50 mW and 43%, respectively. The far-field is measured to be 31 degrees by 46 degrees in the parallel and perpendicular directions, yielding an aspect ratio of 1.5 for the single-mode laser diode. The optical output of the laser diode is a multi-longitudinal mode spectrum spanning 1.98-2.00 mu m at an output power of 50 mW CW. The characteristic temperature of the laser diode is 48 K.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.229788