Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations

Highest crystalline quality and best InAs transport properties are obtained by a buffer layer sequence GaAs approaches AlAs approaches AlSb approaches GaSb, with a final GaSb layer thickness of at least 1 mu m. Using this buffer scheme, mobilities > 600 000 cm sup 2 /V s at 10 K are obtained. Mod...

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Bibliographic Details
Published in:Journal of electronic materials 1993-02, Vol.22 (2), p.255-258
Main Authors: NGUYEN, C, BRAR, B, BOLOGNESI, C. R, PEKARIK, J. J, KROEMER, H, ENGLISH, J. H
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Highest crystalline quality and best InAs transport properties are obtained by a buffer layer sequence GaAs approaches AlAs approaches AlSb approaches GaSb, with a final GaSb layer thickness of at least 1 mu m. Using this buffer scheme, mobilities > 600 000 cm sup 2 /V s at 10 K are obtained. Modulation delta -doping with Te yields electron sheet concentrations < or =8 times 10 sup 1 sup 2 cm sup - sup 2 , while maintaining mobilities approaching 100 000 cm sup 2 /V s at low temps.
ISSN:0361-5235
1543-186X
DOI:10.1007/bf02665035