Growth of epitaxial CoSi sub(2) film on Si(100) substrate induced by an interfacial Ti layer

Ti and Co films were sequentially deposited on Si(100) substrate by ion beam sputtering. The Co/Ti/Si was treated by a multi-step annealing with temperature from 550 to 900 degree C in nitrogen environment. The interfacial Ti layer dissolved the native oxide, providing the following Co-Si reaction a...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 1993-01, Vol.17 (6), p.383-387
Main Authors: Liu, Ping, Li, Bingzong, Zhou, Zuyao, Lin, Chenglu, Zou, Shichang
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ti and Co films were sequentially deposited on Si(100) substrate by ion beam sputtering. The Co/Ti/Si was treated by a multi-step annealing with temperature from 550 to 900 degree C in nitrogen environment. The interfacial Ti layer dissolved the native oxide, providing the following Co-Si reaction an atomically clean silicon surface. This led to the successful growth of epitaxial CoSi sub(2) films on Si(100) substrate. A thin layer of TiN(O) was formed on top of the epitaxial CoSi sub(2). The values of RBS/channeling minimum yield Chi sub(min) for the epitaxial CoSi sub(2) films were 11-12%.
ISSN:0167-577X