Elemental electrical switch enabling phase segregation-free operation

Nonvolatile phase-change memory has been successfully commercialized, but further density scaling below 10 nanometers requires compositionally and structurally homogeneous materials for both the memory cell and the associated vertically stacked two-terminal access switch. The selector switches are m...

Full description

Saved in:
Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2021-12, Vol.374 (6573), p.1390-1394
Main Authors: Shen, Jiabin, Jia, Shujing, Shi, Nannan, Ge, Qingqin, Gotoh, Tamihiro, Lv, Shilong, Liu, Qi, Dronskowski, Richard, Elliott, Stephen R, Song, Zhitang, Zhu, Min
Format: Article
Language:English
Subjects:
Chalcogenides
Chips (memory devices)
Commercialization
Competitive materials
Computer memory
Memory
Nonlinear response
Phase change materials
Phase transitions
Switches
Switching
Tellurium
Threshold voltage
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c391t-5f5f718fdfb71cff39e657b9ef1d2143a4b326c77cf501691b51b13f831751e73
cites cdi_FETCH-LOGICAL-c391t-5f5f718fdfb71cff39e657b9ef1d2143a4b326c77cf501691b51b13f831751e73
container_end_page 1394
container_issue 6573
container_start_page 1390
container_title Science (American Association for the Advancement of Science)
container_volume 374
creator Shen, Jiabin
Jia, Shujing
Shi, Nannan
Ge, Qingqin
Gotoh, Tamihiro
Lv, Shilong
Liu, Qi
Dronskowski, Richard
Elliott, Stephen R
Song, Zhitang
Zhu, Min
description Nonvolatile phase-change memory has been successfully commercialized, but further density scaling below 10 nanometers requires compositionally and structurally homogeneous materials for both the memory cell and the associated vertically stacked two-terminal access switch. The selector switches are mostly amorphous-chalcogenide Ovonic threshold switches (OTSs), operating with a nonlinear current response above a threshold voltage in the amorphous state. However, they currently suffer from the chemical complexity introduced by the quaternary or even more diverse chalcogenide compositions used. We present a single-element tellurium (Te) volatile switch with a large (≥11 megaamperes per square centimeter) drive current density, ~10 ON/OFF current ratio, and faster than 20 nanosecond switching speed. The low OFF current arises from the existence of a ~0.95–electron volt Schottky barrier at the Te–electrode interface, whereas a transient, voltage pulse–induced crystal-liquid melting transition of the pure Te leads to a high ON current. Our discovery of a single-element electrical switch may help realize denser memory chips.
doi_str_mv 10.1126/science.abi6332
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2608532431</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2608532431</sourcerecordid><originalsourceid>FETCH-LOGICAL-c391t-5f5f718fdfb71cff39e657b9ef1d2143a4b326c77cf501691b51b13f831751e73</originalsourceid><addsrcrecordid>eNpdkE1PwzAMhiMEYmNw5oYqceHSLY6bpD2iaXxIk7jAuUozZ-vUj5G0Qvx7CiscONmWH7-yHsaugc8BhFoEW1JjaW6KUiGKEzYFnsk4ExxP2ZRzVHHKtZywixD2nA-7DM_ZBJM0FYkSU7ZaVVRT05kqoops50s7tOGj7OwuosYUVdlso8POBIoCbT1tTVe2Tew8UdQeyP-Ml-zMmSrQ1Vhn7O1h9bp8itcvj8_L-3VsMYMulk46DanbuEKDdQ4zUlIXGTnYCEjQJAUKZbW2TnJQGRQSCkCXImgJpHHG7o65B9--9xS6vC6DpaoyDbV9yIXiqUSRIAzo7T903_a-Gb4bKEwHTmg1UIsjZX0bgieXH3xZG_-ZA8-_Deej4Xw0PFzcjLl9UdPmj_9Vil_DI3i-</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2638085276</pqid></control><display><type>article</type><title>Elemental electrical switch enabling phase segregation-free operation</title><source>American Association for the Advancement of Science</source><source>Alma/SFX Local Collection</source><creator>Shen, Jiabin ; Jia, Shujing ; Shi, Nannan ; Ge, Qingqin ; Gotoh, Tamihiro ; Lv, Shilong ; Liu, Qi ; Dronskowski, Richard ; Elliott, Stephen R ; Song, Zhitang ; Zhu, Min</creator><creatorcontrib>Shen, Jiabin ; Jia, Shujing ; Shi, Nannan ; Ge, Qingqin ; Gotoh, Tamihiro ; Lv, Shilong ; Liu, Qi ; Dronskowski, Richard ; Elliott, Stephen R ; Song, Zhitang ; Zhu, Min</creatorcontrib><description>Nonvolatile phase-change memory has been successfully commercialized, but further density scaling below 10 nanometers requires compositionally and structurally homogeneous materials for both the memory cell and the associated vertically stacked two-terminal access switch. The selector switches are mostly amorphous-chalcogenide Ovonic threshold switches (OTSs), operating with a nonlinear current response above a threshold voltage in the amorphous state. However, they currently suffer from the chemical complexity introduced by the quaternary or even more diverse chalcogenide compositions used. We present a single-element tellurium (Te) volatile switch with a large (≥11 megaamperes per square centimeter) drive current density, ~10 ON/OFF current ratio, and faster than 20 nanosecond switching speed. The low OFF current arises from the existence of a ~0.95–electron volt Schottky barrier at the Te–electrode interface, whereas a transient, voltage pulse–induced crystal-liquid melting transition of the pure Te leads to a high ON current. Our discovery of a single-element electrical switch may help realize denser memory chips.</description><identifier>ISSN: 0036-8075</identifier><identifier>EISSN: 1095-9203</identifier><identifier>DOI: 10.1126/science.abi6332</identifier><identifier>PMID: 34882462</identifier><language>eng</language><publisher>United States: The American Association for the Advancement of Science</publisher><subject>Chalcogenides ; Chips (memory devices) ; Commercialization ; Competitive materials ; Computer memory ; Memory ; Nonlinear response ; Phase change materials ; Phase transitions ; Switches ; Switching ; Tellurium ; Threshold voltage ; Voltage</subject><ispartof>Science (American Association for the Advancement of Science), 2021-12, Vol.374 (6573), p.1390-1394</ispartof><rights>Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c391t-5f5f718fdfb71cff39e657b9ef1d2143a4b326c77cf501691b51b13f831751e73</citedby><cites>FETCH-LOGICAL-c391t-5f5f718fdfb71cff39e657b9ef1d2143a4b326c77cf501691b51b13f831751e73</cites><orcidid>0000-0001-7062-831X ; 0000-0002-6342-456X ; 0000-0001-7859-9429 ; 0000-0003-1394-7028 ; 0000-0001-5659-3624 ; 0000-0001-8057-9742 ; 0000-0002-1925-9624</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2884,2885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/34882462$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Shen, Jiabin</creatorcontrib><creatorcontrib>Jia, Shujing</creatorcontrib><creatorcontrib>Shi, Nannan</creatorcontrib><creatorcontrib>Ge, Qingqin</creatorcontrib><creatorcontrib>Gotoh, Tamihiro</creatorcontrib><creatorcontrib>Lv, Shilong</creatorcontrib><creatorcontrib>Liu, Qi</creatorcontrib><creatorcontrib>Dronskowski, Richard</creatorcontrib><creatorcontrib>Elliott, Stephen R</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Zhu, Min</creatorcontrib><title>Elemental electrical switch enabling phase segregation-free operation</title><title>Science (American Association for the Advancement of Science)</title><addtitle>Science</addtitle><description>Nonvolatile phase-change memory has been successfully commercialized, but further density scaling below 10 nanometers requires compositionally and structurally homogeneous materials for both the memory cell and the associated vertically stacked two-terminal access switch. The selector switches are mostly amorphous-chalcogenide Ovonic threshold switches (OTSs), operating with a nonlinear current response above a threshold voltage in the amorphous state. However, they currently suffer from the chemical complexity introduced by the quaternary or even more diverse chalcogenide compositions used. We present a single-element tellurium (Te) volatile switch with a large (≥11 megaamperes per square centimeter) drive current density, ~10 ON/OFF current ratio, and faster than 20 nanosecond switching speed. The low OFF current arises from the existence of a ~0.95–electron volt Schottky barrier at the Te–electrode interface, whereas a transient, voltage pulse–induced crystal-liquid melting transition of the pure Te leads to a high ON current. Our discovery of a single-element electrical switch may help realize denser memory chips.</description><subject>Chalcogenides</subject><subject>Chips (memory devices)</subject><subject>Commercialization</subject><subject>Competitive materials</subject><subject>Computer memory</subject><subject>Memory</subject><subject>Nonlinear response</subject><subject>Phase change materials</subject><subject>Phase transitions</subject><subject>Switches</subject><subject>Switching</subject><subject>Tellurium</subject><subject>Threshold voltage</subject><subject>Voltage</subject><issn>0036-8075</issn><issn>1095-9203</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpdkE1PwzAMhiMEYmNw5oYqceHSLY6bpD2iaXxIk7jAuUozZ-vUj5G0Qvx7CiscONmWH7-yHsaugc8BhFoEW1JjaW6KUiGKEzYFnsk4ExxP2ZRzVHHKtZywixD2nA-7DM_ZBJM0FYkSU7ZaVVRT05kqoops50s7tOGj7OwuosYUVdlso8POBIoCbT1tTVe2Tew8UdQeyP-Ml-zMmSrQ1Vhn7O1h9bp8itcvj8_L-3VsMYMulk46DanbuEKDdQ4zUlIXGTnYCEjQJAUKZbW2TnJQGRQSCkCXImgJpHHG7o65B9--9xS6vC6DpaoyDbV9yIXiqUSRIAzo7T903_a-Gb4bKEwHTmg1UIsjZX0bgieXH3xZG_-ZA8-_Deej4Xw0PFzcjLl9UdPmj_9Vil_DI3i-</recordid><startdate>20211210</startdate><enddate>20211210</enddate><creator>Shen, Jiabin</creator><creator>Jia, Shujing</creator><creator>Shi, Nannan</creator><creator>Ge, Qingqin</creator><creator>Gotoh, Tamihiro</creator><creator>Lv, Shilong</creator><creator>Liu, Qi</creator><creator>Dronskowski, Richard</creator><creator>Elliott, Stephen R</creator><creator>Song, Zhitang</creator><creator>Zhu, Min</creator><general>The American Association for the Advancement of Science</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QG</scope><scope>7QL</scope><scope>7QP</scope><scope>7QQ</scope><scope>7QR</scope><scope>7SC</scope><scope>7SE</scope><scope>7SN</scope><scope>7SP</scope><scope>7SR</scope><scope>7SS</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7TK</scope><scope>7TM</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H8G</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>K9.</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope><scope>RC3</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0001-7062-831X</orcidid><orcidid>https://orcid.org/0000-0002-6342-456X</orcidid><orcidid>https://orcid.org/0000-0001-7859-9429</orcidid><orcidid>https://orcid.org/0000-0003-1394-7028</orcidid><orcidid>https://orcid.org/0000-0001-5659-3624</orcidid><orcidid>https://orcid.org/0000-0001-8057-9742</orcidid><orcidid>https://orcid.org/0000-0002-1925-9624</orcidid></search><sort><creationdate>20211210</creationdate><title>Elemental electrical switch enabling phase segregation-free operation</title><author>Shen, Jiabin ; Jia, Shujing ; Shi, Nannan ; Ge, Qingqin ; Gotoh, Tamihiro ; Lv, Shilong ; Liu, Qi ; Dronskowski, Richard ; Elliott, Stephen R ; Song, Zhitang ; Zhu, Min</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c391t-5f5f718fdfb71cff39e657b9ef1d2143a4b326c77cf501691b51b13f831751e73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Chalcogenides</topic><topic>Chips (memory devices)</topic><topic>Commercialization</topic><topic>Competitive materials</topic><topic>Computer memory</topic><topic>Memory</topic><topic>Nonlinear response</topic><topic>Phase change materials</topic><topic>Phase transitions</topic><topic>Switches</topic><topic>Switching</topic><topic>Tellurium</topic><topic>Threshold voltage</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shen, Jiabin</creatorcontrib><creatorcontrib>Jia, Shujing</creatorcontrib><creatorcontrib>Shi, Nannan</creatorcontrib><creatorcontrib>Ge, Qingqin</creatorcontrib><creatorcontrib>Gotoh, Tamihiro</creatorcontrib><creatorcontrib>Lv, Shilong</creatorcontrib><creatorcontrib>Liu, Qi</creatorcontrib><creatorcontrib>Dronskowski, Richard</creatorcontrib><creatorcontrib>Elliott, Stephen R</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Zhu, Min</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Animal Behavior Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Calcium &amp; Calcified Tissue Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Chemoreception Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Ecology Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Entomology Abstracts (Full archive)</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Neurosciences Abstracts</collection><collection>Nucleic Acids Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>Copper Technical Reference Library</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>ProQuest Health &amp; Medical Complete (Alumni)</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Genetics Abstracts</collection><collection>MEDLINE - Academic</collection><jtitle>Science (American Association for the Advancement of Science)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shen, Jiabin</au><au>Jia, Shujing</au><au>Shi, Nannan</au><au>Ge, Qingqin</au><au>Gotoh, Tamihiro</au><au>Lv, Shilong</au><au>Liu, Qi</au><au>Dronskowski, Richard</au><au>Elliott, Stephen R</au><au>Song, Zhitang</au><au>Zhu, Min</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Elemental electrical switch enabling phase segregation-free operation</atitle><jtitle>Science (American Association for the Advancement of Science)</jtitle><addtitle>Science</addtitle><date>2021-12-10</date><risdate>2021</risdate><volume>374</volume><issue>6573</issue><spage>1390</spage><epage>1394</epage><pages>1390-1394</pages><issn>0036-8075</issn><eissn>1095-9203</eissn><abstract>Nonvolatile phase-change memory has been successfully commercialized, but further density scaling below 10 nanometers requires compositionally and structurally homogeneous materials for both the memory cell and the associated vertically stacked two-terminal access switch. The selector switches are mostly amorphous-chalcogenide Ovonic threshold switches (OTSs), operating with a nonlinear current response above a threshold voltage in the amorphous state. However, they currently suffer from the chemical complexity introduced by the quaternary or even more diverse chalcogenide compositions used. We present a single-element tellurium (Te) volatile switch with a large (≥11 megaamperes per square centimeter) drive current density, ~10 ON/OFF current ratio, and faster than 20 nanosecond switching speed. The low OFF current arises from the existence of a ~0.95–electron volt Schottky barrier at the Te–electrode interface, whereas a transient, voltage pulse–induced crystal-liquid melting transition of the pure Te leads to a high ON current. Our discovery of a single-element electrical switch may help realize denser memory chips.</abstract><cop>United States</cop><pub>The American Association for the Advancement of Science</pub><pmid>34882462</pmid><doi>10.1126/science.abi6332</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-7062-831X</orcidid><orcidid>https://orcid.org/0000-0002-6342-456X</orcidid><orcidid>https://orcid.org/0000-0001-7859-9429</orcidid><orcidid>https://orcid.org/0000-0003-1394-7028</orcidid><orcidid>https://orcid.org/0000-0001-5659-3624</orcidid><orcidid>https://orcid.org/0000-0001-8057-9742</orcidid><orcidid>https://orcid.org/0000-0002-1925-9624</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0036-8075
ispartof Science (American Association for the Advancement of Science), 2021-12, Vol.374 (6573), p.1390-1394
issn 0036-8075
1095-9203
language eng
recordid cdi_proquest_miscellaneous_2608532431
source American Association for the Advancement of Science; Alma/SFX Local Collection
subjects Chalcogenides
Chips (memory devices)
Commercialization
Competitive materials
Computer memory
Memory
Nonlinear response
Phase change materials
Phase transitions
Switches
Switching
Tellurium
Threshold voltage
Voltage
title Elemental electrical switch enabling phase segregation-free operation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T09%3A48%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Elemental%20electrical%20switch%20enabling%20phase%20segregation-free%20operation&rft.jtitle=Science%20(American%20Association%20for%20the%20Advancement%20of%20Science)&rft.au=Shen,%20Jiabin&rft.date=2021-12-10&rft.volume=374&rft.issue=6573&rft.spage=1390&rft.epage=1394&rft.pages=1390-1394&rft.issn=0036-8075&rft.eissn=1095-9203&rft_id=info:doi/10.1126/science.abi6332&rft_dat=%3Cproquest_cross%3E2608532431%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c391t-5f5f718fdfb71cff39e657b9ef1d2143a4b326c77cf501691b51b13f831751e73%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2638085276&rft_id=info:pmid/34882462&rfr_iscdi=true