Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

We present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x...

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Bibliographic Details
Published in:Applied physics letters 1993-04, Vol.62 (14), p.1626-1628
Main Authors: Sieg, R. M., Alterovitz, S. A., Croke, E. T., Harrell, M. J.
Format: Article
Language:English
Subjects:
Solid-State Physics
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Summary:We present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.
ISSN:0003-6951