Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N sub(2)O oxynitridation

The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EERPOM's fabricated using a furnace N sub(2)O oxynitridation process are described in this paper. These devices exhibited about 8 times better endurance and good data retention characteristics while maintaining defect...

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Bibliographic Details
Published in:IEEE electron device letters 1993-01, Vol.14 (7), p.342-344
Main Authors: Kim, Yeong-Seuk, Okada, Yoshio, Chand, Ko-Ming, Tobin Philip, J, Morton, Bruce, Choe, Henry, Bowers, Mickey, Kuo, Clinton, Chrudimsky, David
Format: Article
Language:English
Online Access:Get full text
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Summary:The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EERPOM's fabricated using a furnace N sub(2)O oxynitridation process are described in this paper. These devices exhibited about 8 times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-water.
ISSN:0741-3106