Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N sub(2)O oxynitridation

The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EERPOM's fabricated using a furnace N sub(2)O oxynitridation process are described in this paper. These devices exhibited about 8 times better endurance and good data retention characteristics while maintaining defect...

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Published in:IEEE electron device letters 1993-01, Vol.14 (7), p.342-344
Main Authors: Kim, Yeong-Seuk, Okada, Yoshio, Chand, Ko-Ming, Tobin Philip, J, Morton, Bruce, Choe, Henry, Bowers, Mickey, Kuo, Clinton, Chrudimsky, David
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container_issue 7
container_start_page 342
container_title IEEE electron device letters
container_volume 14
creator Kim, Yeong-Seuk
Okada, Yoshio
Chand, Ko-Ming
Tobin Philip, J
Morton, Bruce
Choe, Henry
Bowers, Mickey
Kuo, Clinton
Chrudimsky, David
description The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EERPOM's fabricated using a furnace N sub(2)O oxynitridation process are described in this paper. These devices exhibited about 8 times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-water.
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_26099635</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26099635</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_260996353</originalsourceid><addsrcrecordid>eNqNjMuKwjAUQLMYYXzMP9yVj0UhfUzFtVRcqB3G2Uva3uqVTKK5Cerfq-AHuDpwOJwP0ZXTLI7SWOafosd8lDLOsmnWFbSyl6jBFmv_gGHyN1CmgQPtD5FDTaoi_ZSL4m9dbqEofn7L9YihVZWjWnlsIDCZPbTBGVUjbIBDNU4mJdjrzZB31ChP1gxEp1Wa8evFvhg-nvNldHL2HJD97p-4Rq2VQRt4l-RyNsvT7_Tt8A4kKklx</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26099635</pqid></control><display><type>article</type><title>Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N sub(2)O oxynitridation</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Kim, Yeong-Seuk ; Okada, Yoshio ; Chand, Ko-Ming ; Tobin Philip, J ; Morton, Bruce ; Choe, Henry ; Bowers, Mickey ; Kuo, Clinton ; Chrudimsky, David</creator><creatorcontrib>Kim, Yeong-Seuk ; Okada, Yoshio ; Chand, Ko-Ming ; Tobin Philip, J ; Morton, Bruce ; Choe, Henry ; Bowers, Mickey ; Kuo, Clinton ; Chrudimsky, David</creatorcontrib><description>The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EERPOM's fabricated using a furnace N sub(2)O oxynitridation process are described in this paper. These devices exhibited about 8 times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-water.</description><identifier>ISSN: 0741-3106</identifier><language>eng</language><ispartof>IEEE electron device letters, 1993-01, Vol.14 (7), p.342-344</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780</link.rule.ids></links><search><creatorcontrib>Kim, Yeong-Seuk</creatorcontrib><creatorcontrib>Okada, Yoshio</creatorcontrib><creatorcontrib>Chand, Ko-Ming</creatorcontrib><creatorcontrib>Tobin Philip, J</creatorcontrib><creatorcontrib>Morton, Bruce</creatorcontrib><creatorcontrib>Choe, Henry</creatorcontrib><creatorcontrib>Bowers, Mickey</creatorcontrib><creatorcontrib>Kuo, Clinton</creatorcontrib><creatorcontrib>Chrudimsky, David</creatorcontrib><title>Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N sub(2)O oxynitridation</title><title>IEEE electron device letters</title><description>The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EERPOM's fabricated using a furnace N sub(2)O oxynitridation process are described in this paper. These devices exhibited about 8 times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-water.</description><issn>0741-3106</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqNjMuKwjAUQLMYYXzMP9yVj0UhfUzFtVRcqB3G2Uva3uqVTKK5Cerfq-AHuDpwOJwP0ZXTLI7SWOafosd8lDLOsmnWFbSyl6jBFmv_gGHyN1CmgQPtD5FDTaoi_ZSL4m9dbqEofn7L9YihVZWjWnlsIDCZPbTBGVUjbIBDNU4mJdjrzZB31ChP1gxEp1Wa8evFvhg-nvNldHL2HJD97p-4Rq2VQRt4l-RyNsvT7_Tt8A4kKklx</recordid><startdate>19930101</startdate><enddate>19930101</enddate><creator>Kim, Yeong-Seuk</creator><creator>Okada, Yoshio</creator><creator>Chand, Ko-Ming</creator><creator>Tobin Philip, J</creator><creator>Morton, Bruce</creator><creator>Choe, Henry</creator><creator>Bowers, Mickey</creator><creator>Kuo, Clinton</creator><creator>Chrudimsky, David</creator><scope>7SC</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>19930101</creationdate><title>Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N sub(2)O oxynitridation</title><author>Kim, Yeong-Seuk ; Okada, Yoshio ; Chand, Ko-Ming ; Tobin Philip, J ; Morton, Bruce ; Choe, Henry ; Bowers, Mickey ; Kuo, Clinton ; Chrudimsky, David</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_260996353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Yeong-Seuk</creatorcontrib><creatorcontrib>Okada, Yoshio</creatorcontrib><creatorcontrib>Chand, Ko-Ming</creatorcontrib><creatorcontrib>Tobin Philip, J</creatorcontrib><creatorcontrib>Morton, Bruce</creatorcontrib><creatorcontrib>Choe, Henry</creatorcontrib><creatorcontrib>Bowers, Mickey</creatorcontrib><creatorcontrib>Kuo, Clinton</creatorcontrib><creatorcontrib>Chrudimsky, David</creatorcontrib><collection>Computer and Information Systems Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Yeong-Seuk</au><au>Okada, Yoshio</au><au>Chand, Ko-Ming</au><au>Tobin Philip, J</au><au>Morton, Bruce</au><au>Choe, Henry</au><au>Bowers, Mickey</au><au>Kuo, Clinton</au><au>Chrudimsky, David</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N sub(2)O oxynitridation</atitle><jtitle>IEEE electron device letters</jtitle><date>1993-01-01</date><risdate>1993</risdate><volume>14</volume><issue>7</issue><spage>342</spage><epage>344</epage><pages>342-344</pages><issn>0741-3106</issn><abstract>The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EERPOM's fabricated using a furnace N sub(2)O oxynitridation process are described in this paper. These devices exhibited about 8 times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-water.</abstract></addata></record>
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title Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N sub(2)O oxynitridation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T01%3A24%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low-defect-density%20and%20high-reliability%20FETMOS%20EEPROM's%20fabricated%20using%20furnace%20N%20sub(2)O%20oxynitridation&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Kim,%20Yeong-Seuk&rft.date=1993-01-01&rft.volume=14&rft.issue=7&rft.spage=342&rft.epage=344&rft.pages=342-344&rft.issn=0741-3106&rft_id=info:doi/&rft_dat=%3Cproquest%3E26099635%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_miscellaneous_260996353%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=26099635&rft_id=info:pmid/&rfr_iscdi=true