Effect of strontium substitution in (Nb, Bi) doped TiO2 varistors

A low voltage TiO2 varistor doped with Nb2O5, Bi2O3 and SrO was systematically investigated. Samples were obtained by sintering at four temperatures (1100-1350 C). I-V characteristics and capacitance measurements at different frequencies were obtained. XRD was used to analyse the evolution of phases...

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Bibliographic Details
Published in:Materials letters 1996-09, Vol.28 (1-3), p.37-41
Main Authors: SANTHOSH, P. N, KHARAT, D. K, DATE, S. K
Format: Article
Language:English
Subjects:
Applied sciences
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
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Summary:A low voltage TiO2 varistor doped with Nb2O5, Bi2O3 and SrO was systematically investigated. Samples were obtained by sintering at four temperatures (1100-1350 C). I-V characteristics and capacitance measurements at different frequencies were obtained. XRD was used to analyse the evolution of phases with temperature during fabrication of the varistor. In addition, the microstructures were examined by SEM. The two performance parameters, the nonlinear coefficient and breakdown voltage per grain boundary were estimated from the I-V measurements and found to be 8.4 and 0.31 V respectively. The room temperature dielectric constant was found to be very large (epsilon approximately equal to 18000). 10 refs.
ISSN:0167-577X
1873-4979
DOI:10.1016/0167-577X(96)00023-7