Inhomogeneous dielectrics grown by plasma-enhanced chemical vapor deposition

Compositionally inhomogeneous dielectric layers are realized by plasma-enhanced chemical vapor deposition (PECVD) growth of silicon oxynitride (SiON) layers. The gases used for growing inhomogeneous SiON layers are silane (SiH 4), nitrogen (N 2) and nitrous oxide (N 2O). The flow rates of SiH 4 and...

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Bibliographic Details
Published in:Thin solid films 1993-01, Vol.236 (1), p.64-66
Main Authors: Lim, S., Ryu, J.H., Wager, J.F., Casas, L.M.
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Compositionally inhomogeneous dielectric layers are realized by plasma-enhanced chemical vapor deposition (PECVD) growth of silicon oxynitride (SiON) layers. The gases used for growing inhomogeneous SiON layers are silane (SiH 4), nitrogen (N 2) and nitrous oxide (N 2O). The flow rates of SiH 4 and N 2 are kept constant and real-time control of the N 2O flow rate is achieved using a Techware PAL-68000 process controller. Linearly graded and superlattice-like SiON layers with refractive indices varying from 1.46 to 2.05 are designed and fabricated. The compositional profile is analyzed by Auger electron spectroscopy sputter profiling. A ten-period rugate filter is designed and fabricated. Possible applications of inhomogeneous dielectric layers grown by PECVD include various kinds of optical filters and planar optical waveguides.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(93)90643-4