Numerical modeling of particle dynamics in a rotating disk chemical vapor deposition reactor

• Published in: Journal of crystal growth 1993-09, Vol.132 (3), p.513-522
• Main Authors: Davis, R.W., Moore, E.F., Zachariah, M.R.
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(93)90079-C

Particle contamination is considered to be one of the major problem areas in the processing of semiconductors via chemical vapor deposition (CVD). Thus it is very important to acquire an understanding of particle transport processes in CVD reactors. This paper addresses this issue by presenting the results of a numerical simulation of particle dynamics in a rotating disk CVD reactor. The background flowfield calculation employs the full axisymmetric Navier-Stokes equations, while individual particle trajectories are computed by accounting for inertial, thermophoretic and gravitational effects. The results of this simulation are analyzed to determine under what conditions particles greater than 1 μm in diameter impact and thus contaminate the deposition substrate. It is shown that particle size and injection location as well as flow direction (with or against gravity) and disk characteristics (temperature and rotation rate) all play important roles here. The results for various parameter combinations are presented and discussed, as is the concept of a global type of particle contamination parameter.