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Entropy-Assisted High-Entropy Oxide with a Spinel Structure toward High-Temperature Infrared Radiation Materials
Developing advanced materials with a high-entropy concept is one of the hot trends in materials science. The configurational entropy of high-entropy materials can be tuned by introducing different atomic species, which can also impart a result in excellent physical and chemical properties. In this w...
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Published in: | ACS applied materials & interfaces 2022-01, Vol.14 (1), p.1950-1960 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Developing advanced materials with a high-entropy concept is one of the hot trends in materials science. The configurational entropy of high-entropy materials can be tuned by introducing different atomic species, which can also impart a result in excellent physical and chemical properties. In this work, we synthesized a solid-solution oxide (Cu, Mn, Fe, Cr)3O4 by a simple and scalable solid-phase synthesis method. We extensively investigated the microstructure and chemical composition, indicating that (Cu, Mn, Fe, Cr)3O4 has a single-phase spinel structure. Simultaneously, we reasonably evaluated the position occupied by the elements of (Cu, Mn, Fe, Cr)3O4 in a spinel structure as (Cu0.75Fe0.25)(Fe0.25Cr0.375Mn0.375)2O4. Here, we first evaluated the infrared radiation performance of (Cu, Mn, Fe, Cr)3O4. The new, high-entropy oxide (HEO) (Cu, Mn, Fe, Cr)3O4 powder exhibits high infrared emissivity values of 0.879 and 0.848 in the wavelengths of 0.78–2.5 and 2.5–16 μm, respectively, and has excellent thermal stability. More importantly, the infrared emissivity values of as-prepared HEO coating reach 0.955 (0.78–2.5 μm) at room temperature and 0.936 (3–16 μm) at 800 °C. This work provides a viable strategy toward the laboratory mass production of this HEO for infrared radiation materials, which shows great potential in the energy-related applications. |
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ISSN: | 1944-8244 1944-8252 |
DOI: | 10.1021/acsami.1c20055 |