A new drain engineering structure-SCD-LDD (surface counter doped LDD) for improved hot carrier reliability

A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF 2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the satu...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993-09, Vol.32 (9A), p.L1203-L1205
Main Authors: JIH WEN CHOU, CHUN YUN CHANG, LIEN TSE HO, JOE KO, HSUE, P
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF 2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the saturation drain current was conducted downward away from the maximum electric fields, resulting in a substantial enhancement of hot carrier reliability due to suppression of hot carrier generation and injection with this structure.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.l1203